DOCTEUR DE L'ECOLE POLYTECHNIQUE Aurélien DAVID High-efficiency GaN-based light-emitting diodes: Light extraction by photonic crystals and microcavities
ثبت نشده
چکیده
منابع مشابه
Design and fabrication of high-index-contrast self- assembled texture for light extraction enhancement in LEDs Citation
We developed a high-index-contrast photonic structure for improving the light extraction efficiency of light-emitting diodes (LEDs) by a self-assembly approach. In this approach, a two-dimensional grating can be non-lithographically integrated on the top of virtually any types of LEDs with controlled structural parameters and material indices. As a proof of concept, our designed photonic struct...
متن کاملDesign and Modeling for Enhancement of Light Extraction in Light-emitting Diodes with Archimedean Lattice Photonic Crystals
Light extraction efficiency of light-emitting diodes (LEDs) based on various photonic crystal (PhC) structures is investigated in this study. By using the plane wave method and the finite element method, the influence of several factors on the enhancement of light extraction is discussed, including lattice type, the density of states from a photonic band diagram, the ratio of cylinder radius an...
متن کاملHigh Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals
A thin slab of two-dimensional photonic crystal is shown to alter drastically the radiation pattern of spontaneous emission. More specifically, by eliminating all guided modes at the transition frequencies, spontaneous emission can be coupled entirely to free space modes, resulting in a greatly enhanced extraction efficiency. Such structures might provide a solution to the long-standing problem...
متن کاملSpontaneous Emission Extraction and Purcell Enhancement from Thin-Film 2-D Photonic Crystals
Electromagnetic band structure can produce either an enhancement or a suppression of spontaneous emission from two-dimensional (2-D) photonic crystal thin films. We believe that such effects might be important for light emitting diodes. Our experiments were based on thin-film InGaAs/InP 2-D photonic crystals at ambient temperature, but the concepts would apply equally to InGaN thin films, for e...
متن کاملEnhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and t...
متن کامل